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IRLU110A

Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 100VLower RDS(ON): 0.336W (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-to-...

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IRLU110A: Features: Avalanche Rugged TechnologyRugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 100VLower RDS(O...

IRLU110A Data Sheet

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Part Number:
IRLU110A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

  Avalanche Rugged Technology
 Rugged Gate Oxide Technology
  Lower Input Capacitance
  Improved Gate Charge
  Extended Safe Operating Area
  Lower Leakage Current: 10A (Max.) @ VDS = 100V
 Lower RDS(ON): 0.336W (Typ.)


Specifications

Symbol
 Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
100
V
ID
 Continuous Drain Current (TC=25°C)
4.7
A
Continuous Drain Current (TC=100°C)
2
IDM
 Drain Current-Pulsed (1)
16
A
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulsed Avalanche Energy (2)
58
mJ
IAR
 Avalanche Current (1)
4.7
A
EAR
 Repetitive Avalanche Energy (1)
2.2
mJ
dv/dt
 Peak Diode Recovery dv/dt (2)
6.5
V/ns
PD
 Total Power Dissipation (TA=25°C)*
2.5
W
Total Power Dissipation (TC=25°C)
Linear Derating Factor
22
0.18
W
W/°C
TJ , TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +150
°C
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
300



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