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MFG:N/A  Package Cooled:NA/  D/C:09+  

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Part Number: IRLU120N

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRLU120N General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRLU120N Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.0  
IDM Pulsed Drain Current 35  
PD @TC = 25°C C Power Dissipation 48 W
  Linear Derating Factor 0.32 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy 85 mJ
IAR Avalanche Current 6.0 A
EAR Repetitive Avalanche Energy 4.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
TSTG Storage Temperature Range
-55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )  

IRLU120N datasheet

IRLU120N
PDF/DataSheet Download

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