MFG:IR/FAIRCHILD Package Cooled:TO-251 D/C:05+
MFG: IR/FAIRCHILD
Package Cooled: TO-251
D/C: 05+
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
23 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
16 | |
| IDM |
Pulsed Drain Current |
96 | |
| PD @TC = 25°C |
Power Dissipation |
45 |
W |
|
Linear Derating Factor |
0.30 |
W/°C | |
| VGS |
Gate-to-Source Voltage |
± 16 |
V |
| EAS |
Single Pulse Avalanche Energy |
77 |
mJ |
| IAR |
Avalanche Current |
14 |
A |
| EAR |
Repetitive Avalanche Energy |
4.5 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
· Logic-Level Gate Drive
· Ultra Low On-Resistance
· Surface Mount (IRLR2703)
· Straight Lead (IRLU2703)
· Advanced Process Technology
·Fast Switching
· Fully Avalanche Rated
IRLU2703
PDF/DataSheet Download
MOSFET N-CH 100V 10A I-PAK
Fifth Generation HEXFETs from International Rectifier IRLU120Nutilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...
Price: 1.3-1.5 USD
PLL Clock Multiplier, SOP, 7 V
Price: 1-2 USD
IGBT Modules 1200V 200A DUAL
Price: 1.5-1.8 USD
Monolithic Synchronous, Voltage-to-Frequency Converter, PLCC20, Full-Scale Frequency, Extremely Lo...
Price: 10-100 USD
field programmable gate array, 240-PQFP, 275.03 MHz, 1.5 V, EP1C12Q240I7N
Price: 120-130 USD
MODULE, X-Band Power, Amplifier MMIC, three-stage, 9.5 to 13.3GHz, 26 dBm
Price: 0.5-1 USD
15, 25, 35A, high current, bridge rectifier, Square Bridge, VFM 1.2 V, 10 μA
Price: 1-100 USD
rectifier diode, 125A, reverse voltages up to 1800V, hermetic metal case, SKN100/12, Semikron Inte...
Price: 3.5-5 USD
LF base station IC, 16-SOIC, 0.2 mA, 4.5 to 5.5V, PLL, power on reset, TI-RFid LF transponder func...
Price: 1-2 USD
H15R1202, reverse conducting IGBT, 1200 V, 30A, 357 W, TO-247
Price: 45-50 USD
N-Channel MOSFET, TO-57, 180 V
Price: 50-55 USD
G86-731-A2, BGA, Nordic Semiconductor, Integrated Circuits
Price: 4-8 USD
octal driver, 8-bit CMOS shift register, 3.3 MHz Data-lnput Rate, low Output-Saturation Voltage
