IRLU2703

MOSFET N-CH 30V 23A I-PAK

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IRLU2703 Picture
SeekIC No. : 003432008 Detail

IRLU2703: MOSFET N-CH 30V 23A I-PAK

floor Price/Ceiling Price

Part Number:
IRLU2703
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 23A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 45 mOhm @ 14A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 15nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 450pF @ 25V
Power - Max: 45W Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Supplier Device Package: I-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) @ Vgs: 15nC @ 4.5V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 23A
Power - Max: 45W
Manufacturer: International Rectifier
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Input Capacitance (Ciss) @ Vds: 450pF @ 25V
Rds On (Max) @ Id, Vgs: 45 mOhm @ 14A, 10V


Features:

· Logic-Level Gate Drive
· Ultra Low On-Resistance
· Surface Mount (IRLR2703)
· Straight Lead (IRLU2703)
· Advanced Process Technology
·Fast Switching
· Fully Avalanche Rated




Specifications

Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
23
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
16
IDM
Pulsed Drain Current
96
PD @TC = 25°C
Power Dissipation
45
W
Linear Derating Factor
0.30
W/°C
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy
77
mJ
IAR
Avalanche Current
14
A
EAR
Repetitive Avalanche Energy
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )



Description

Fifth Generation HEXFETs from International Rectifier IRLU2703 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized IRLU2703 device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK IRLU2703 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.




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