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MFG:1360  

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Part Number: IRLU2905Z

 

MFG: 1360

 

 

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...


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IRLU2905Z General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRLU2905Z Maximum Ratings

 Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @10V (Silicon Limited)
60
ID @ TC = 100°C Continuous Drain Current, VGS @10V
43
A
ID @ TC = 25°C Continuous Drain Current, VGS @10V (Silicon Limited)
42
IDM Pulsed Drain Current
240
PD @TC = 25°C Power Dissipation
110
W

 Linear Derating Factor
0.72
W/°C
VGS Gate-to-Source Voltage
±16
V
EAS(Thermally limited) Single Pulse Avalanche Energy
57
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
85
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
°C

 Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

IRLU2905Z Features

Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

IRLU2905Z datasheet

IRLU2905Z
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