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Part Number: IRLU2908

 

 

 

 

Description: Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest ...


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IRLU2908 General Description


Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 junction operating temperature, low RJC, fast switching speed and improved repetitive avalanche rating.

These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.\

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRLU2908 Maximum Ratings

  Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited)
39
A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V (See Fig. 9)
28
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited)
30
IDM Pulsed Drain Current
150
PD @TC = 25 Gate-to-Emitter Voltage
120
W
   
0.77
W/
VGS Gate-to-Source Voltage
± 16
V
EAS Single Pulse Avalanche Energy (Thermally Limited)
180
mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value
250
IAR Avalanche Current
See Fig.12a,12b,15,16
A
EAR Repetitive Avalanche Energy
mJ
dv/dt Peak Diode Recovery dv/dt
2.3
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )

IRLU2908 Features

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175 Operating Temperature
l Fast Switching
Repetitive Avalanche Allowed up to Tjmax

IRLU2908 datasheet

IRL1004
PDF/DataSheet Download

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