Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Drain-Source Breakdown Voltage
: 30 V
Mounting Style
: Through Hole
Packaging
: Tube
Gate-Source Breakdown Voltage
: 16 V
Continuous Drain Current
: 46 A
Package / Case
: IPAK
Resistance Drain-Source RDS (on)
: 24 mOhms
Features: · Logic-Level Gate Drive
· Ultra Low On-Resistance
· Surface Mount (IRLR3103)
· Straight Lead (IRLU3103)
· Advanced Process Technology
· Fast Switching
· Fully Avalanche Rated
· Lead-FreeSpecifications
|
Parameter |
Max. |
Units |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
55 |
A |
| ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V |
39 |
| IDM |
Pulsed Drain Current |
220 |
| PD @TC = 25 |
Power Dissipation |
107 |
W |
|
Linear Derating Factor |
0.71 |
W/ |
| VGS |
Gate-to-Source Voltage |
± 16 |
V |
| EAS |
Single Pulse Avalanche Energy |
240 |
mJ |
| IAR |
Avalanche Current |
34 |
A |
| EAR |
Repetitive Avalanche Energy |
11 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ,TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
DescriptionFifth Generation HEXFETs from International Rectifier IRLU3103PbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLU3103PbF design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK IRLU3103PbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Parameters: | Technical/Catalog Information | IRLU3103PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 55A |
| Rds On (Max) @ Id, Vgs | 19 mOhm @ 33A, 10V |
| Input Capacitance (Ciss) @ Vds | 1600pF @ 25V |
| Power - Max | 107W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 50nC @ 4.5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRLU3103PBF
IRLU3103PBF
|
IRLU3103PBF Data Sheet
