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Part Number: IRLU3114ZPbF

 

 

 

 

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...


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IRLU3114ZPbF General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRLU3114ZPbF Maximum Ratings

  Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited)
130
A
ID @ TC =100 Continuous Drain Current, VGS @ 10V (Package Limited)
89
ID @ TC = 25 Continuous Drain Current,VGS @ 10V (Package Limited)
42
IDM Pulsed Drain Current
500
PD @TC= 25 Power Dissipation
140
W
  Linear Derating Factor
0.95
W/
VGS Gate-to-Source Voltage
±16
V
EAS (Thermally limited) Single Pulse Avalanche Energy
130
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
260
IAR Avalanche Current
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
  Reflow Soldering Temperature, for 10 seconds
300
  Mounting Torque, 6-32 or M3 screw
10 lbf`in (1.1N`m)

IRLU3114ZPbF Features

Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
 Logic Level

IRLU3114ZPbF datasheet

IRL1004
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