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Part Number: IRLU3705ZPbF

 

 

 

 

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes t...


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IRLU3705ZPbF General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRLU3705ZPbF Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25
 Continuous Drain Current VGS@ 10V (Silicon Limited)
89
A
ID @ TC = 100
 Continuous Drain Current, VGS@10V
63
ID @ TC = 25
 Continuous Drain Current, VGS @ 10V (Package Limited)
42
IDM
 Pulsed Drain Current
360
PD @ TC = 25
 Maximum Power Dissipation
130
W
 Linear Derating Factor
0.88
W/
VGS
 Gate-to-Source Voltage
±16
V
EAS (Thermally limited)
 Single Pulse Avalanche Energy
110
mJ
EAS (Tested)
 Single Pulse Avalanche Energy Tested Value
190
IAR
 Avalanche Current
See Fig.12a,12b,15,16
A
EAR
 Repetitive Avalanche Energy
mJ
TJ
TSTG
 Operating Junction
Storage Temperature Range
-40 to + 150
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
  Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)


IRLU3705ZPbF Features

` Logic Level
` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free

IRLU3705ZPbF datasheet

IRL1004
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