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IRLU4343-701

Features: Advanced Process TechnologyKey Parameters Optimized for Class-D Audio Amplifier ApplicationsLow RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI 175°C Operating Junction Temperature for Ruggedness Repetitive Avalanc...

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IRLU4343-701: Features: Advanced Process TechnologyKey Parameters Optimized for Class-D Audio Amplifier ApplicationsLow RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr...

IRLU4343-701 Data Sheet

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Part Number:
IRLU4343-701
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDSON for Improved Efficiency
Low Qg and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
175°C Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
 Multiple Package Options


Specifications

  Parameter
Max
Units
VDS Drain-to-Source Voltage
55
V
VGS Gate-to-Source Voltage
±20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
26
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
19
IDM Pulsed Drain Current
80
PD @TC = 25°C Power Dissipation
79
W
PD @TC = 100°C Power Dissipation
39
  Linear Derating Factor
0.53
W/°C
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-40 to + 175
°C
  Clamping Pressure
N



Description

This Digital Audio HEXFET® IRLU4343-701 is specifically designed for Class-D audio amplifier applications. This MosFET IRLU4343-701 utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET IRLU4343-701 are 175°C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.




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