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IRLU4343-701PbF

Features: ` Advanced Process Technology`Key Parameters Optimized for Class-D Audio Amplifier Applications` Low RDSON for Improved Efficiency` Low Qg and Qsw for Better THD and Improved Efficiency` Low Qrr for Better THD and Lower EMI` 175 Operating Junction Temperature for Ruggedness` Repetitive A...

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SeekIC No. : 004378517 Detail

IRLU4343-701PbF: Features: ` Advanced Process Technology`Key Parameters Optimized for Class-D Audio Amplifier Applications` Low RDSON for Improved Efficiency` Low Qg and Qsw for Better THD and Improved Efficiency` L...

IRLU4343-701PbF Data Sheet

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Part Number:
IRLU4343-701PbF
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

` Advanced Process Technology
`Key Parameters Optimized for Class-D Audio Amplifier Applications
` Low RDSON for Improved Efficiency
` Low Qg and Qsw for Better THD and Improved Efficiency
` Low Qrr for Better THD and Lower EMI
` 175 Operating Junction Temperature for Ruggedness
` Repetitive Avalanche Capability for Robustness and Reliability
` Multiple Package Options
` Lead-Free


Specifications

  Parameter Max. Units
VDS Drain-to-Source Voltage 55 V
VGS Gate-to-Source Voltage ±20
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 26 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 19
IDM Pulsed Drain Current 80
PD @TC = 25 Power Dissipation 79 W
PD @TC = 100 Power Dissipation 39
  Linear Derating Factor 0.53 W/
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -40 to + 175
  Clamping Pressure N

Repetitive rating; pulse width limited by max. junction temperature.
Contact factory for mounting information


Description

This Digital Audio HEXFET® IRLU4343-701PbF is specifically designed for Class-D audio amplifier applications. This MosFET IRLU4343-701PbF utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET IRLU4343-701PbF are 175 operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.




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