IRLU4343

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 26A
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Power - Max: 79W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds: 740pF @ 50V


Features:

Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDSON for Improved Efficiency
Low Qg and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
175°C Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
 Multiple Package Options


Specifications

	Parameter	Max	Units
VDS	Drain-to-Source Voltage	55	V
VGS	Gate-to-Source Voltage	±20
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	26	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	19
IDM	Pulsed Drain Current	80
PD @TC = 25°C	Power Dissipation	79	W
PD @TC = 100°C	Power Dissipation	39
	Linear Derating Factor	0.53	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 175	°C
	Clamping Pressure		N

Description

This Digital Audio HEXFET® IRLU4343 is specifically designed for Class-D audio amplifier applications. This MosFET IRLU4343  utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET IRLU4343 are 175°C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.