IRLU7821

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) @ Vgs: 14nC @ 4.5V
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 65A
Packaging: Tube
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
Manufacturer: International Rectifier
Power - Max: 75W
Input Capacitance (Ciss) @ Vds: 1030pF @ 15V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak


Application

 High Frequency Synchronous Buck Converters for Computer Processor Power
  High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	65
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	74	A
IDM	Pulsed Drain Current	260
PD @TC = 25°C	Maximum Power Dissipation	75	W
PD @TC = 100°C	Maximum Power Dissipation	37.5
	Linear Derating Factor	0.50	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C

Parameters:

Technical/Catalog Information	IRLU7821
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	65A
Rds On (Max) @ Id, Vgs	10 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1030pF @ 15V
Power - Max	75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRLU7821 IRLU7821