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Part Number: IRLU9343-701

 

 

 

 

Description: This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This...


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IRLU9343-701 General Description


This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.

IRLU9343-701 Maximum Ratings

Parameter
Max
Units
VDS Drain-to-Source Voltage
55
V
VGS Gate-to-Source Voltage
±20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
-20
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
-14
IDM Pulsed Drain Current
-60
PD @TC = 25°C Power Dissipation
79
W
PD @TC = 100°C Power Dissipation
39
Linear Derating Factor
0.53
W/°C
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-40 to + 175
°C
Clamping Pressure
N

IRLU9343-701 Features

Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDSON for Improved Efficiency
Low Qg and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
175°C Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
 Multiple Package Options

IRLU9343-701 datasheet

IRLU9343-701
PDF/DataSheet Download

  • Datasheet: IRLU9343-701
  • File Size: 251855 KB
  • Manufacturer: IRF [International Rectifier]
  • Click here to Download

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