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Part Number: IRLU9343PbF

 

 

 

 

Description: This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This...


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IRLU9343PbF General Description


This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.

IRLU9343PbF Maximum Ratings

Symbol Parameter Max. Units
VDS Drain-to-Source Voltage -55 V
VGS Gate-to-Source Voltage ± 20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -20 A
ID @ TC =100°C Continuous Drain Current, VGS @ 10V -14 A
IDM Pulsed Drain Current -60 A
PD @ TC = 25 Maximum Power Dissipation 79 W
PD @ TC =100°C Maximum Power Dissipation 39 W
  Linear Derating Factor

0.53

 W
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Clamping Pressure - N

IRLU9343PbF Features

· Advanced Process Technology
·Key Parameters Optimized for Class-D Audio Amplifier Applications
· Low RDSON for Improved Efficiency
· Low Qg and Qsw for Better THD and Improved Efficiency
· Low Qrr for Better THD and Lower EMI
· 175°C Operating Junction Temperature for Ruggedness
· Repetitive Avalanche Capability for Robustness and Reliability
· Multiple Package Options
· Lead-Free

IRLU9343PbF datasheet

IRL1004
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