Purchase IRLW610A, In-stock IRLW610A From SeekIC.
MFG:FAIRC Package Cooled:TO-263(D2PAK) D/C:09+
- Table of contents:
IRLW610A
-
Suppliers
DataSheet
General Description
IRLW610A Maximum Ratings
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
200 |
V |
|
ID |
Continuous Drain Current (TC=25°C) |
3.3 |
A |
| Continuous Drain Current (TC=100°C) |
2.1 | ||
|
IDM |
Drain Current-Pulsed (1) |
12 |
A |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulsed Avalanche Energy (2) |
29 |
mJ |
|
IAR |
Avalanche Current (1) |
3.3 |
A |
|
EAR |
Repetitive Avalanche Energy (1) |
3.3 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (3) |
5 |
V/ns |
|
PD |
Total Power Dissipation (TA=25°C)* |
3.1 |
W |
| Total Power Dissipation (TC=25°C) Linear Derating Factor |
33 0.26 |
W W/°C | |
|
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
°C |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds |
300 |
IRLW610A Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
150°C Operating Temperature
Lower Leakage Current: 10mA (Max.) @ VDS = 200V
Lower RDS(ON): 1.185W (Typ.)
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
150°C Operating Temperature
Lower Leakage Current: 10mA (Max.) @ VDS = 200V
Lower RDS(ON): 1.185W (Typ.)
IRLW610A
PDF/DataSheet Download
- Datasheet: IRLW610A
- File Size: 241715 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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