MOSFET 200V N-Channel a-FET Logic Level
IRLW620ATM: MOSFET 200V N-Channel a-FET Logic Level
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Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Im...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 5 A | ||
| Resistance Drain-Source RDS (on) : | 0.8 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-263 | Packaging : | Reel |