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IRLW630ATM

MOSFET 200V N-Channel a-FET Logic Level

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SeekIC No. : 00161620 Detail

IRLW630ATM: MOSFET 200V N-Channel a-FET Logic Level

IRLW630ATM Data Sheet

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Part Number:
IRLW630ATM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-263
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Parameters:

Technical/Catalog InformationIRLW630ATM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs400 mOhm @ 4.5A, 5V
Input Capacitance (Ciss) @ Vds 755pF @ 25V
Power - Max3.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs27nC @ 5V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRLW630ATM
IRLW630ATM



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