MFG:IR Package Cooled:02+ D/C:263
MFG: IR
Package Cooled: 02+
D/C: 263
Description: Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ14L) is available for lowprofile applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 10 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 7.2 | A |
| IDM | Pulsed Drain Current | 40 | A |
| PD @TA = 25°C | Power Dissipation | 3.7 | A |
| PD @TC = 25°C | Power Dissipation | 43 | W |
| Linear Derating Factor | 0.29 | W/°C | |
| VGS | Gate-to-Source Voltage | ±10 | V |
| EAS | Single Pulse Avalanche Energy | 68 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 4.5 | V/ns |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 to + 175 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | °C |
IRLZ14S
PDF/DataSheet Download
Third Generation HEXFETs from International Rectifier IRLZ14L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLZ14L design that HEXFE...
The IRLIZ44NPbF is a kind of fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely law on-resistance per silicon area. The benefit, combined Mth the fast switching speed and ruggedized device desig...
Power MOSFET
MOSFET N-CHAN 200V 9A I2PAK
Price: 9.45-10.31 USD
22-Bit analog-to-digital converter, 24-SOIC, SPI compatible ssi interface
Price: 6-15 USD
flatpack relay, Long seller, 2 Form C, 25mΩ, Gold-clad silver, 60 W
Price: 20-200 USD
Intelligent Power Module, 2500 Vrms, Complete Output Power Circuit, PM50RVA120-2, MITSUBISHI Elect...
Price: 38-42 USD
24-port, GIGABIT ethernet multilayer switch, BGA
Price: 2.5-3 USD
high performance, digitally controlled, variable gain amplifier, TSOP16, 5.5 V, 1 kW load, 380 MHz...
Price: 10-20 USD
250-270MHz, 12.5V, 30W FM mobile radio, Mitsubishi Electric Semiconductor
Price: 5-10 USD
SANYO, SF-HD8, Optical Pick up, Laser Head, Optoelectronics
Price: 98.5-99 USD
Thyristor / Diode Modules, 273A, 1.6KV, Hard soldered joints, SKKT273/16E
Price: 10-35 USD
Mitsubishi igbt module, Low Drive Power, High Frequency Operation, 1200V Collector-Emitter Voltage
Price: 0.4-0.7 USD
OB2268CP, SOP8, Lite-On
Price: 0.88-1.99 USD
power inductor, 1.0uH, 20.0A, SMD, RoHS Compliant, Surface Mount
Price: 1.2-1.4 USD
SOP, 250ps (cycle to cycle) CPU jitter, Frequency Generator & Integrated Buffers
