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Part Number: IRLZ24N

 

MFG: IR

 

 

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRLZ24N General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRLZ24N Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18 A
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current 72 A
PD @TC = 25°C Power Dissipation 45 W
  Linear Derating Factor 0.30 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 68 mJ
IAR Avalanche Current 11 A
EAR Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt
4.6
 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)  
  Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)  

IRLZ24N datasheet

IRLZ24N
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