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IRLZ34N

MOSFET N-CH 55V 30A TO-220AB

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SeekIC No. : 004378544 Detail

IRLZ34N: MOSFET N-CH 55V 30A TO-220AB

IRLZ34N Data Sheet

floor Price/Ceiling Price

US $ .56~.56 / Piece | Get Latest Price
Part Number:
IRLZ34N
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~450
  • Unit Price
  • $.56
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Features:

 Logic-Level Gate Drive
 Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated


Specifications

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
30
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
21
IDM Pulsed Drain Current
110
PD @TC = 25°C Max. Dissipation
68
W
Linear Derating Factor
0.45
W/°C
VGS Gate-to-Source Voltage
± 26
V
EAS Single Pulse Avalanche Energy
110
mJ
IAR Avalanche Current
16
A
EAR Repetitive Avalanche Energy
6.8
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)



Description

Fifth Generation HEXFETs from International Rectifier IRLZ34N utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLZ34N design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 package of IRLZ34N is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRLZ34N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs35 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 880pF @ 25V
Power - Max68W
PackagingBulk
Gate Charge (Qg) @ Vgs25nC @ 5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRLZ34N
IRLZ34N



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