IRLZ44N

The fifth generation HEXFETs from international rectifier IRLZ44A utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designerwith an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The lowthermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The features of IRLZ44N can be summarized as (1)logic-level gate drive; (2)advanced process technology; (3)dynamic dv/dt Rating; (4)175°C operating temperature; (5)fast switching; (6)fully avalanche rated.
 
The absolute maximum ratings of IRLZ44N are (1)ID @ TC = 25°C continuous drain current, VGS @ 5.0: 47 A; (2)ID @ TC = 100°C continuous drain current, VGS as 5.0: 33 A; (3)pulsed drain current IDM: 160 A; (4)PD @ TC = 25°C power dissipation: 110W; (5)VGS gate-to-source voltage: ±16V; (6)EAR single pulse avalanche energy: 210 mJ; (7)dv/dt peak diode recovery dv/dt: 5.0 V/ns; (8)TJ, TSTG junction and storage temperature range: -55 to +175°C.