IRLZ44NL

MOSFET N-CH 55V 47A TO-262

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IRLZ44NL Picture
SeekIC No. : 003431419 Detail

IRLZ44NL: MOSFET N-CH 55V 47A TO-262

floor Price/Ceiling Price

Part Number:
IRLZ44NL
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 47A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 48nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1700pF @ 25V
Power - Max: 3.8W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 47A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) @ Vds: 1700pF @ 25V
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 48nC @ 5V
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V
Supplier Device Package: TO-262


Features:

 Advanced Process Technology
 Surface Mount (IRLZ44NS)
 Low-profile through-hole (IRLZ44NL)
 175°C Operating Temperature
Fast Switching
 Fully Avalanche Rated
Logic-Level Gate Drive



Specifications

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
47
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
33
IDM Pulsed Drain Current
160
PD @TC = 25°C Max. Dissipation
3.8
W
PD @TC = 25°C Power Dissipation
110
W
Linear Derating Factor
0.71
W/°C
VGS Gate-to-Source Voltage
± 16
V
EAS Single Pulse Avalanche Energy
210
mJ
IAR Avalanche Current
25
A
EAR Repetitive Avalanche Energy
11
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)



Description

Fifth Generation HEXFETs from International Rectifier IRLZ44NL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRLZ44NL design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRLZ44NL is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRLZ44NL provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRLZ44NL is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRLZ44NL) is available for lowprofile applications.




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