IRLZ44NPBF

The IRLZ44NPBF is designed as one kind of power MOSFET device that has some points of features:(1)Dynamic dV/dt Rating; (2)Logic-Level Gate Drive; (3)RDS(on) Specified at VGS = 4 V and 5 V; (4)175 Operating Temperature; (5)Fast Switching; (6)Ease of Paralleling; (7)Simple Drive Requirements; (8)Compliant to RoHS Directive 2002/95/EC. And the TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

The absolute maximum ratings of the IRLZ44NPBF can be summarized as:(1)Drain-Source Voltage: 60 V;(2)Gate-Source Voltage: +/- 10 V;(3)Continuous Drain Current: 50 or 36 A;(4)Pulsed Drain Current: 200 A;(5)Single Pulse Avalanche Energy: 400 mJ;(6)Peak Diode Recovery dV/dt: 4.5 V/ns;(7)Power Dissipation: 150 W;(8)Operating Junction and Storage Temperature Range: -55 to 175 °C.

The electrical characteristics of the IRLZ44NPBF can be summarized as:(1)Drain-Source Breakdown Voltage: 60 V;(2)VDS Temperature Coefficient: 0.070 V/°C;(3)Gate-Source Threshold Voltage: 1.0 to 2.0 V;(4)Gate-Source Leakage: ±100 nA;(5)Zero Gate Voltage Drain Current: 25 or 250 uA;(6)Drain-Source On-State Resistance: 0.028 or 0.039 ;(7)Forward Transconductance: 23 S. If you want to know more information such as the electrical characteristics about the IRLZ44NPBF, please download the datasheet in www.seekic.com or www.chinaicmart.com.