MFG:N/A Package Cooled:NA/ D/C:09+
MFG: N/A
Package Cooled: NA/
D/C: 09+
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V(Silicon Limited) |
51 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
36 | |
| IDM | Pulsed Drain Current |
204 | |
| PD @TC = 25°C | Power Dissipation |
80 |
W |
| Linear Derating Factor |
0.53 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 16 |
V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy |
78 |
mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
110 | |
| IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) | ||
| Mounting Torque, 6-32 or M3 screw |
10 lbf* in (1.1N* m) |
IRLZ44Z
PDF/DataSheet Download
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