MFG:TO-262 Package Cooled:7850 D/C:IR
MFG: TO-262
Package Cooled: 7850
D/C: IR
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
|
Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V(Silicon Limited) |
51 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
36 | |
| IDM | Pulsed Drain Current |
204 | |
| PD @TC = 25°C | Power Dissipation |
80 |
W |
| Linear Derating Factor |
0.53 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 16 |
V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy |
78 |
mJ |
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
110 | |
| IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) | ||
| Mounting Torque, 6-32 or M3 screw |
10 lbf* in (1.1N* m) |
IRLZ44ZL
PDF/DataSheet Download
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRLZ44Z utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of IRLZ44Z are a 175°C junction operating temperatu...
Power MOSFET IRLZ44S, SiHLZ44S
Third Generation HEXFETs from International Rectifier IRLZ44Sprovide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommo...
MOSFET N-CH 55V 47A D2PAK
MOSFET N-CH 55V 47A D2PAK
MOSFET N-CH 55V 47A D2PAK
Price: 0.9-2 USD
IC OFFLINE SWIT OCP 8DIP - LNK306PN
Price: 15-20 USD
PK25GB80, THYRISTOR MODULE, 800 V, 25A, 100 A/μs, SanRex
Price: 2.45-3.45 USD
versatile LCD controller IC, QFP-60, –0.3 to 7.0 V, 300 mW, SED1335F
Price: 1.2-1.5 USD
six-input channel, analog front-end processor, 28-Lead SOIC, 44-Lead TQFP
Price: 0.15-0.2 USD
constant-current sink driver, SSOP-24, -0.3 to 7.0 V, 1.05W, 3mA to 60mA, In-rush current control
Price: 32.3-46.15 USD
BGA, North Bridge IC Ball, NF-G6100-N-A2
Price: 3.9-4.2 USD
Power Switch, Smart Highside, High Current
Price: 1-20 USD
268,435,456bit CMOS Synchronous DRAM, 4 banks of 4,194,304x16
Price: 1-2 USD
High Grade Volume Control, SSOP, Low distortion factor, Low residual noise, 5V, 100mW
Price: 0.35-0.45 USD
240V (D-S), N-Channel MOSFET, TO-92
Price: 3.5-6.5 USD
56-TSSOP, 3 Volt Single Power Supply, Low Power CMOS Design, Dual-Channel, Copier Signal Processor
Price: 0.2-0.5 USD
RS-232, 16-SOIC, transceiver, 3 V ~ 5.5 V, RoHS Compliant, Low Supply Current
