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Part Number: IRLZ44ZPbF

 

 

 

 

Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...


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IRLZ44ZPbF General Description


Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRLZ44ZPbF Maximum Ratings

  Parameter
Maximum
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited)
51
A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V
36
IDM Pulsed Drain Current 􀀀
204
PD @TC= 25 Power Dissipation
80
W
  Linear Derating Factor
0.53
W/
VGS Gate-to-Source Voltage
± 16
V
EAS (Thermally limited) Single Pulse Avalanche Energy
78
mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value
110
IAR Avalanche Current􀀀
See Fig.12a, 12b, 15, 16
A
EAR Repetitive Avalanche Energy
mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw
10 lbf`in (1.1N`m)

IRLZ44ZPbF Features

Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
 Lead-Free

IRLZ44ZPbF datasheet

IRL1004
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