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IRS2118

Features: · Floating channel designed for bootstrap operation· Fully operational to +600 V· Tolerant to negative transient voltage, dV/dt immune· Gate drive supply range from 10 V to 20V · Undervoltage lockout· CMOS Schmitt-triggered inputs with pull-down· Output in phase with input (IRS2117) or o...

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IRS2118: Features: · Floating channel designed for bootstrap operation· Fully operational to +600 V· Tolerant to negative transient voltage, dV/dt immune· Gate drive supply range from 10 V to 20V · Undervolt...

IRS2118 Data Sheet

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Part Number:
IRS2118
Supply Ability:
5000

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Upload time: 2024/4/27

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Product Details

Description



Features:

· Floating channel designed for bootstrap operation
· Fully operational to +600 V
· Tolerant to negative transient voltage, dV/dt immune
· Gate drive supply range from 10 V to 20V
· Undervoltage lockout
· CMOS Schmitt-triggered inputs with pull-down
· Output in phase with input (IRS2117) or out of phase with input (IRS2118)
· RoHS compliant


Pinout

Connection Diagram


Specifications

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figs. 5 through 8.

Symbol
Definition
Min.
Max.
Units
VB
 High-side floating supply voltage
-0.3
625
V
VS
 High-side floating supply offset voltage
VB - 25
VB + 0.3
VHO
 High-side floating output voltage
VS - 0.3
VB + 0.3
VCC
 Logic supply voltage
-0.3
25
VIN
 Logic input voltage
-0.3
VCC + 0.3
dVs/dt
 Allowable offset supply voltage transient(Fig. 2)
-
50
V/ns
PD
 Package power dissipation @ TA +25 (8 lead PDIP)
-
1.0
W
(8 lead SOIC)
-
0.625
RthJA
 Thermal resistance, junction to ambient (8 lead PDIP)
-
125
/W
(8 lead SOIC)
-
200
TJ
 Junction temperature
-
150
TS
 Storage temperature
-55
150
TL
 Lead temperature (soldering, 10 seconds)
-
300



Description

The IRS2117/IRS2118 are a high voltage, high speed powerMOSFET and IGBT driver. ProprietaryHVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel powerMOSFET or IGBT in the high-side or low-side configuration which operates up to 600 V.




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