IRS2153DPBF

Product : Half-Bridge Drivers
Maximum Operating Temperature : + 125 C
Packaging : Tube
Mounting Style : Through Hole
Package / Case : DIP-8
Supply Current : 5 mA
Fall Time : 80 ns
Maximum Power Dissipation : 1 W
Type : High and Low Side
Rise Time : 220 ns
Supply Voltage - Max : 16.8 V
Supply Voltage - Min : 10.1 V


Features:

· Integrated 600 V half-bridge gate driver
· C_T, R_T programmable oscillator
· 15.4 V Zener clamp on V_CC
· Micropower startup
· Non-latched shutdown on CT pin (1/6th V_CC)
· Internal bootstrap FET
· Excellent latch immunity on all inputs and outputs
· +/- 50 V/ns dV/dt immunity
· ESD protection on all pins
· 8-lead SOIC or PDIP package
· Internal deadtime


Specifications

Symbol	Definition	Min.	Max.	Units
VB VS VHO VLO	High side floating supply voltage High side floating supply offset voltage High side floating output voltage Low side output voltage	-0.3 VB - 25 VS 0.3 -0.3	625 VB + 0.3 VB + 0.3 VCC + 0.3	V
IRT	RT pin current	-5	5	mA
VRT VCT	RT pin voltage CT pin voltage	-0.3 -0.3	VCC + 0.3 VCC + 0.3	V
ICC IOMAX	Supply current (Note 1) Maximum allowable current at LO and HO due to external power transistor Miller effect.	--- -500	20 500	mA
dVS/dt	Allowable offset voltage slew rate	-50	50	V/ns
PD PD	Maximum power dissipation @ TA +25 , 8-Pin DIP Maximum power dissipation @ TA +25 , 8-Pin SOIC	--- ---	1.0 0.625	W
RthJA RthJA	Thermal resistance, junction to ambient, 8-Pin DIP Thermal resistance, junction to ambient, 8-Pin SOIC	--- ---	85 128	/W
TJ TS TL	Junction temperature Storage temperature Lead temperature (soldering, 10 seconds)	-55 -55 ---	150 150 300

Note 1: This IC contains a zener clamp structure between the chip V_CC and COM which has a nominal breakdown voltage of 15.4 V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the V_CLAMP specified in the Electrical Characteristics section.

Description

Description The IRS2153(1)D is based on the popular IR2153 selfoscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable rugged monolithic construction. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Noise immunity is achieved with low di/dt peak of the gate drivers.

Parameters:

Technical/Catalog Information	IRS2153DPBF
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	Half Bridge
Voltage - Supply	10 V ~ 15.4 V
Current - Peak	180mA
Delay Time	-
Package / Case	8-DIP
Packaging	Tube
Number of Outputs	2
Input Type	Self Oscillating
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	600V
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRS2153DPBF IRS2153DPBF