MFG:INTERNATIONALRECTIFIER Package Cooled:DIP/SOP D/C:08+
MFG: INTERNATIONALRECTIFIER
Package Cooled: DIP/SOP
D/C: 08+
Description: The IRSF3011 is a three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-tempe...
The IRSF3011 is a three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-temperature, ESD and over-voltage protections.
The on-chip protection circuit latches off the power MOSFET in case the drain current exceeds 7A or the junction temperature exceeds 165°C and keeps it off until the input is driven low. The drain-to-source voltage is actively clamped at 55V (typical), prior to the avalanche of POWER MOSFET, thus improving its performance during turn-off with inductive loads.
The input current requirements are very low (300A) which makes the IRSF3011 compatible with most existing designs based on standard power MOSFETs.
|
Minimum |
Maximum |
Units |
Test Conditions | ||
| Vds,max | Continuous Drain to Source Voltage |
- |
50 |
V |
|
| Vin,max | Continuous Input Voltage |
-0.3 |
10 | ||
| Ids | Continuous Drain Current |
- |
self limited |
Tc 25 | |
| Pd | Power Dissipation |
- |
30 |
W |
|
| EAS | Unclamped Single Pulse Inductive Energy |
- |
200 |
mJ |
|
| Vesd1 | Electrostatic Discharge Voltage (Human Body Model) |
- |
4000 |
V |
1000pF. 1.5k |
| Vesd2 | Electrostatic Discharge Voltage (Machine Model) |
- |
1000 |
200pF, 0 | |
| TJop | Operating Junction Temperature Range |
-55 |
self limited |
||
| TStg | Storage Temperature Range |
-55 |
175 |
||
| TL | Lead Temperature (Soldering, 10 seconds) |
- |
300 |
IRSF3011
PDF/DataSheet Download
IC FET SMART SW 50V 11A D2PAK
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