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Description: The ISSI IS32WV204816B is a high-performance CMOS Pseudo Static RAM, organized as 2Meg x 16 bits.<...


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IS32WV204816B General Description


The ISSI IS32WV204816B is a high-performance CMOS Pseudo Static RAM, organized as 2Meg x 16 bits.

ISSI CMOS technology provides high density, high speed low power devices that features SRAM-like write timing. Data is written to memory cells on the rising edge of the WE signal. With a page size of 4 words, the device has a page access operation. The device also supports deep powerdown mode providing low-power standby.

The IS32WV204816B is packaged in a 48-pin mini-BGA (6mm x 8mm).

IS32WV204816B Maximum Ratings

Symbol
Parameters
Rating
Unit
VT
Voltage on Any Pin Relative to GND
0.2 to VDD+3.6
V
VDD
Supply Voltage
0.2 to VDD+3.6
V
IOUT
Output Current
50
mA
PD
Power Dissipation
0.6
W
TSTG
Storage Temperature
55 to +150

Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
    to the device. This is a stress rating only and functional operation of the device at these or any other
    conditions above those indicated in the operational sections of this specification is not implied. Exposure
    to absolute maximum rating conditions for extended periods may affect reliability.

IS32WV204816B Features

• Access time: 70ns
• TTL compatible inputs and outputs; tri-state I/O
• Wide Power supply voltage: 2.2V to 3.6V
• CMOS Standby: 70µA (32-Mbit)
• Deep Power Down Standby: 5µA (32-Mbit)
• Deep Power-Down Mode: Data Invalid
• Page Operation Mode: Four Word Access
• Logic compatible with SRAM R/W (WE) pin.
• Industrial Temperature Range: -40 to 85

IS32WV204816B datasheet

IS3020
PDF/DataSheet Download

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