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IS42S16128

Features: • Clock frequency: 125 MHz, 100 MHz, 83 MHz• Two banks can be operated simultaneously and independently• Single 3.3V power supply• LVTTL interface• Programmable burst length (1, 2, 4, 8, full page)• Programmable burst sequence: Sequential/Interleave&#...

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SeekIC No. : 004379033 Detail

IS42S16128: Features: • Clock frequency: 125 MHz, 100 MHz, 83 MHz• Two banks can be operated simultaneously and independently• Single 3.3V power supply• LVTTL interface• Programmab...

IS42S16128 Data Sheet

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Part Number:
IS42S16128
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Description



Features:

• Clock frequency: 125 MHz, 100 MHz, 83 MHz
• Two banks can be operated simultaneously and independently
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
  (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto refresh, self refresh
• 1K refresh cycles every 16 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Byte controlled by LDQM and UDQM
• Package 400-mil 50-pin TSOP II


Pinout

Connection Diagram


Specifications

Symbol Parameters
Rating
Unit
VCC MAX Maximum Supply Voltage
1.0 to +4.6
V
VccQMAX Maximum Supply Voltage for Output Buffer
1.0 to +4.6
V
VIN Input Voltage
1.0 to +5.5
V
VOUT Output Voltage
1.0 to +4.6
V
PD MAX Allowable Power Dissipation
1
W
ICS Output Shorted Current
50
mA
TOPR Operating Temperature
0 to +70
TSTG Storage Temperature
55 to +150



Description

ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.




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