IS61C256AH-12J

The IS61C256AH-12J is designed as one kind of very high-speed, low power, 32,768 word by 8-bit static RAM device that assumes a standby mode at which the power dissipation can be reduced down to 250 uW (typical) with CMOS input levels. And this device is pin compatible with other 32K x 8 SRAMs and are available in 28-pin PDIP, SOJ, and TSOP (Type I) packages.

Features of the IS61C256AH-12J are:(1)High-speed access time: 10, 12, 15, 20, 25 ns; (2)Low active power: 400 mW (typical); (3)Low standby power; (4)250 uW (typical) CMOS standby; (5)55 mW (typical) TTL standby; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Single 5V power supply.

The absolute maximum ratings of the IS61C256AH-12J can be summarized as:(1)Terminal Voltage with Respect to GND: 0.5 to +7.0 V;(2)Storage Temperature: -65 to +150 °C;(3)Power Dissipation: 1.5 W;(4)Temperature Under Bias: -55 to +125 °C;(5)DC Output Current: 20 mA. If you want to know more information such as the electrical characteristics about the IS61C256AH-12J, please download the datasheet in www.seekic.com or www.chinaicmart.com.