IS61C3216

Features: • High-speed access time: 10, 12, 15, and 20 ns• CMOS low power operation - 450 mW (typical) operating - 250 W (typical) standby• TTL compatible interface levels• Single 5V ± 10% power supply• I/O compatible with 3.3V device• Fully static operation: no...

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IS61C3216 Picture
SeekIC No. : 004379125 Detail

IS61C3216: Features: • High-speed access time: 10, 12, 15, and 20 ns• CMOS low power operation - 450 mW (typical) operating - 250 W (typical) standby• TTL compatible interface levels• S...

floor Price/Ceiling Price

Part Number:
IS61C3216
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

• High-speed access time: 10, 12, 15, and 20 ns
• CMOS low power operation
   - 450 mW (typical) operating
   - 250 W (typical) standby
• TTL compatible interface levels
• Single 5V ± 10% power supply
• I/O compatible with 3.3V device
• Fully static operation: no clock or refresh required
• Three state outputs
• Industrial temperature available
• Available in 44-pin 400mil SOJ package and 44-pin TSOP-2



Pinout

  Connection Diagram


Specifications

Symbol Parameter
Value
Unit
VCC Power Supply Voltage Relative to GND
0.5 to +7.0
V
VTERM Terminal Voltage with Respect to GND
0.5 to+7.0
V
TSTG Storage Temperature
65 to +150
PT Power Dissipation
1.5
W
IOUT DC Output Current (LOW)
20
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.



Description

The ICSI IS61C3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ICSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

The IS61C3216 is packaged in the JEDEC standard 44-pin 400mil SOJ and 44-pin 400mil TSOP-2.




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