Features: • High-speed access time: 10 ns• CMOS low power operation- 1 mW (typical) CMOS standby- 125 mW (typical) operating• TTL compatible interface levels• Single 5V power supply• Fully static operation: no clock or refresh required• Lead-free availablePinout...
IS61C64AL: Features: • High-speed access time: 10 ns• CMOS low power operation- 1 mW (typical) CMOS standby- 125 mW (typical) operating• TTL compatible interface levels• Single 5V power...
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Symbol | Parameter | Value | Unit |
VTERM | Terminal Voltage with Respect to GND | 0.5 to +7.0 | V |
TSTG | Storage Temperature | 65 to +150 | °C |
PT | Power Dissipation | 1.5 | W |
IOUT | DC Output Current (LOW) | 20 | mA |
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The ISSI IS61C64AL is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumption.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 150 W (typical) with CMOS input levels.
Easy memory expansion is provided by using one Chip Enable input, CE. The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS61C64AL is packaged in the JEDEC standard 28- pin, 300-mil SOJ, and TSOP.