SRAM 2Mb 128Kx16 10ns 3.3v
IS61LV12816L-10T: SRAM 2Mb 128Kx16 10ns 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
| Memory Size : | 2 Mbit | Organization : | 128 K x 16 | ||
| Access Time : | 10 ns | Supply Voltage - Max : | 3.6 V | ||
| Supply Voltage - Min : | 3.135 V | Maximum Operating Current : | 60 mA | ||
| Maximum Operating Temperature : | + 70 C | Minimum Operating Temperature : | 0 C | ||
| Mounting Style : | SMD/SMT | Package / Case : | TSOP-44 |
| Technical/Catalog Information | IS61LV12816L-10T |
| Vendor | ISSI, Integrated Silicon Solution Inc |
| Category | Integrated Circuits (ICs) |
| Memory Type | SRAM - Asynchronous |
| Memory Size | 2M (128K x 16) |
| Speed | 10ns |
| Interface | Parallel |
| Package / Case | 44-TSOP II |
| Packaging | Tray |
| Voltage - Supply | 3.135 V ~ 3.6 V |
| Operating Temperature | 0°C ~ 70°C |
| Format - Memory | RAM |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IS61LV12816L 10T IS61LV12816L10T |