SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v
IS61LV12816L-10TL: SRAM 2Mb 128Kx16 10ns Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Memory Size : | 2 Mbit | Organization : | 128 K x 16 | ||
Access Time : | 10 ns | Supply Voltage - Max : | 3.6 V | ||
Supply Voltage - Min : | 3.135 V | Maximum Operating Current : | 3 mA | ||
Maximum Operating Temperature : | + 70 C | Minimum Operating Temperature : | 0 C | ||
Mounting Style : | SMD/SMT | Package / Case : | TSOP-44 |
The IS61LV12816L-10TL is one member of the IS61LV25616AL family which is designed as the 256K x 16 high-speed asynchronous CMOS static RAM device that is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10 mm).
Features of the IS61LV12816L-10TL are:(1)High-speed access time: 10, 12 ns; (2)CMOS low power operation; (3)Low stand-by power: Less than 5 mA (typ.) CMOS stand-by; (4)TTL compatible interface levels; (5)Single 3.3V power supply; (6)Fully static operation: no clock or refresh required; (7)Three state outputs; (8)Data control for upper and lower bytes; (9)Industrial temperature available.
The absolute maximum ratings of the IS61LV12816L-10TL can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to VDD+0.5 V;(2)Storage Temperature: -65 to +150 °C;(3)Power Dissipation: 1.0 W;(4)VDD Related to GND: -0.3 to +4.0 V.
The electrical characteristics of this device can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to VDD+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -2 to +2 uA;(6)Output Leakage: -2 to +2 uA. If you want to know more information such as the electrical characteristics about the IS61LV12816L-10TL, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Technical/Catalog Information | IS61LV12816L-10TL |
Vendor | ISSI, Integrated Silicon Solution Inc |
Category | Integrated Circuits (ICs) |
Memory Type | SRAM - Asynchronous |
Memory Size | 2M (128K x 16) |
Speed | 10ns |
Interface | Parallel |
Package / Case | 44-TSOP II |
Packaging | Tray |
Voltage - Supply | 3.135 V ~ 3.6 V |
Operating Temperature | 0°C ~ 70°C |
Format - Memory | RAM |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IS61LV12816L 10TL IS61LV12816L10TL 706 1033 ND 7061033ND 706-1033 |