SRAM 3Mb 128Kx24 8ns 3.3v Async SRAM 3.3v
IS61LV12824-8TQ: SRAM 3Mb 128Kx24 8ns 3.3v Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
| Memory Size : | 3 Mbit | Organization : | 128 K x 24 |
| Access Time : | 8 ns | Supply Voltage - Max : | 3.63 V |
| Supply Voltage - Min : | 3.135 V | Maximum Operating Current : | 210 mA |
| Maximum Operating Temperature : | + 70 C | Minimum Operating Temperature : | 0 C |
| Mounting Style : | SMD/SMT | Package / Case : | TQFP-100 |
| Packaging : | Tube |
| Technical/Catalog Information | IS61LV12824-8TQ |
| Vendor | ISSI, Integrated Silicon Solution Inc |
| Category | Integrated Circuits (ICs) |
| Memory Type | SRAM - Asynchronous |
| Memory Size | 3M (128K x 24) |
| Speed | 8nS |
| Interface | Parallel |
| Package / Case | 100-TQFP |
| Packaging | Tray |
| Voltage - Supply | 3.135 V ~ 3.6 V |
| Operating Temperature | 0°C ~ 70°C |
| Format - Memory | RAM |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IS61LV12824 8TQ IS61LV128248TQ |