IS61LV256-12T

The IS61LV256-12T is one member of the very high-speed, low power, 32,768-word by 8-bit static RAM that is fabricated using ISSI's high-performance CMOS technology. Also this device is fabricated using ISSI's high-performance CMOS technology.

Features of the IS61LV256-12T are:(1)High-speed access time: 12, 15, 20, 25 ns; (2)Automatic power-down when chip is deselected; (3)CMOS low power operation; (4)345 mW (max.) operating; (5)7 mW (max.) CMOS standby; (6)TTL compatible interface levels; (7)Single 3.3V power supply; (8)Fully static operation: no clock or refresh required; (9)Three-state outputs.

The absolute maximum ratings of the IS61LV256-12T can be summarized as:(1)Storage Temperature: -65 to +150 °C;(2)Power Dissipation: 0.5 W;(3)Output Current (per I/O): 100 mA;(4)Voltage Relative to VSS for I/O Pins: -0.5 to VDDQ + 0.3 V;(5)DC Output Current (LOW): 20 mA.

The electrical characteristics of this IS61LV256-12T can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.2 to Vcc + 0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage Current: -2 to 2 uA;(6)Output Leakage Current: -5 to 5 uA. If you want to know more information about IS61LV256-12T, please download the datasheet in www.seekic.com or www.chinaicmart.com .