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MFG:ISSI


Part Number: IS61LV256
MFG: ISSI
Description: The ISSI IS61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated ...
MFG:ISSI


MFG: ISSI
Description: The ISSI IS61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated ...
The ISSI IS61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns maximum.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 50 mW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW Chip Enable (CE). The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IS61LV256 is available in the JEDEC standard 28-pin, 300-mil DIP and SOJ, plus the 450-mil TSOP package.
| Symbol | Parameter | Value | Unit |
| VTERM | Terminal Voltage with Respect toGND | 0.5 to VDD+4.6 | V |
| TSTG | Storage Temperature | 65 to +125 | °C |
| PT | Power Dissipation | 65 to +150 | W |
| IOUT | DC Output Current (LOW) | 20 | mA |
IS61LV256
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