SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
IS61LV25616AL-10BLI: SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
| Memory Size : | 4 Mbit | Organization : | 256 K x 16 | ||
| Access Time : | 10 ns | Supply Voltage - Max : | 3.6 V | ||
| Supply Voltage - Min : | 3.135 V | Maximum Operating Current : | 110 mA | ||
| Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C | ||
| Mounting Style : | SMD/SMT | Package / Case : | mBGA-48 |
| Technical/Catalog Information | IS61LV25616AL-10BLI |
| Vendor | ISSI, Integrated Silicon Solution Inc |
| Category | Integrated Circuits (ICs) |
| Memory Type | SRAM - Asynchronous |
| Memory Size | 4M (256K x 16) |
| Speed | 10nS |
| Interface | Parallel |
| Package / Case | 48-MBGA |
| Packaging | Tray |
| Voltage - Supply | 3.135 V ~ 3.6 V |
| Operating Temperature | -40°C ~ 85°C |
| Format - Memory | RAM |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IS61LV25616AL 10BLI IS61LV25616AL10BLI 706 1034 ND 7061034ND 706-1034 |