SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
IS61LV25616AL-10LQI-TR: SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
| Memory Size : | 4 Mbit | Organization : | 256 K x 16 |
| Access Time : | 10 ns | Supply Voltage - Max : | 3.6 V |
| Supply Voltage - Min : | 3.135 V | Maximum Operating Current : | 110 mA |
| Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C |
| Mounting Style : | SMD/SMT | Package / Case : | TSOP-44 |
| Packaging : | Reel |
| Technical/Catalog Information | IS61LV25616AL-10LQI-TR |
| Vendor | ISSI, Integrated Silicon Solution Inc |
| Category | Integrated Circuits (ICs) |
| Memory Type | SRAM - Asynchronous |
| Memory Size | 4M (256K x 16) |
| Speed | 10ns |
| Interface | Parallel |
| Package / Case | 44-LQFP |
| Packaging | Tape & Reel (TR) |
| Voltage - Supply | 3.135 V ~ 3.6 V |
| Operating Temperature | -40°C ~ 85°C |
| Format - Memory | RAM |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IS61LV25616AL 10LQI TR IS61LV25616AL10LQITR |