IS61LV25616AL-10TL

SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v

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SeekIC No. : 00471109 Detail

IS61LV25616AL-10TL: SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v

floor Price/Ceiling Price

US $ 2.31~2.83 / Piece | Get Latest Price
Part Number:
IS61LV25616AL-10TL
Mfg:
ISSI
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $2.83
  • $2.68
  • $2.46
  • $2.31
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Memory Size : 4 Mbit Organization : 256 K x 16
Access Time : 10 ns Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 3.135 V Maximum Operating Current : 15 mA
Maximum Operating Temperature : + 70 C Minimum Operating Temperature : 0 C
Mounting Style : SMD/SMT Package / Case : TSOP-44    

Description

Packaging :
Mounting Style : SMD/SMT
Access Time : 10 ns
Organization : 256 K x 16
Supply Voltage - Max : 3.6 V
Package / Case : TSOP-44
Maximum Operating Temperature : + 70 C
Minimum Operating Temperature : 0 C
Memory Size : 4 Mbit
Supply Voltage - Min : 3.135 V
Maximum Operating Current : 15 mA


Specifications

  Connection Diagram


Description

The IS61LV25616AL-10TL is one member of the IS61LV25616AL family which is designed as the 256K x 16 high-speed asynchronous CMOS static RAM device that is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and 48-pin Mini BGA (8mm x 10 mm).

Features of the IS61LV25616AL-10TL are:(1)High-speed access time: 10, 12 ns; (2)CMOS low power operation; (3)Low stand-by power: Less than 5 mA (typ.) CMOS stand-by; (4)TTL compatible interface levels; (5)Single 3.3V power supply; (6)Fully static operation: no clock or refresh required; (7)Three state outputs; (8)Data control for upper and lower bytes; (9)Industrial temperature available.

The absolute maximum ratings of the IS61LV25616AL-10TL can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to VDD+0.5 V;(2)Storage Temperature: -65 to +150 °C;(3)Power Dissipation: 1.0 W;(4)VDD Related to GND: -0.3 to +4.0 V.

The electrical characteristics of this device can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to VDD+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -2 to +2 uA;(6)Output Leakage: -2 to +2 uA. If you want to know more information such as the electrical characteristics about the IS61LV25616AL-10TL, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationIS61LV25616AL-10TL
VendorISSI, Integrated Silicon Solution Inc
CategoryIntegrated Circuits (ICs)
Memory TypeSRAM - Asynchronous
Memory Size4M (256K x 16)
Speed10ns
InterfaceParallel
Package / Case44-TSOP II
PackagingTray
Voltage - Supply3.135 V ~ 3.6 V
Operating Temperature0°C ~ 70°C
Format - MemoryRAM
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IS61LV25616AL 10TL
IS61LV25616AL10TL
706 1035 ND
7061035ND
706-1035



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