MFG:ISSI Package Cooled:N/A D/C:07+
MFG: ISSI
Package Cooled: N/A
D/C: 07+
Description: The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabri...
The ISSI IS61LV3216 is a high-speed, 512K static RAM organized as 32,768 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS61LV3216 is packaged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP (Type 2).
|
Symbol |
Parameter |
Value |
Unit |
|
VCC |
Supply Voltage with Respect to GND |
0.5 to +4.6 |
V |
|
VTERM |
Terminal Voltage with Respect to GND |
0.5 to Vcc + 0.5 |
V |
|
TSTG |
Storage Temperature |
65 to +150 |
°C |
|
PT |
Power Dissipation |
1.0 |
W |
|
IOUT |
DC Output Current (LOW) |
20 |
mA |
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
IS61LV3216-12K
PDF/DataSheet Download
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