PinoutDescriptionThe IS61LV5128-10T is designed as one kind of very high-speed, low power, 524,288-word by 8-bit CMOS static RAM device that is available in 36-pin 400-mil SOJ, 36- pin mini BGA, and 44-pin TSOP (Type II) packages. And this device operates from a single 3.3V power supply and all in...
IS61LV5128-10T: PinoutDescriptionThe IS61LV5128-10T is designed as one kind of very high-speed, low power, 524,288-word by 8-bit CMOS static RAM device that is available in 36-pin 400-mil SOJ, 36- pin mini BGA, and...
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
The IS61LV5128-10T is designed as one kind of very high-speed, low power, 524,288-word by 8-bit CMOS static RAM device that is available in 36-pin 400-mil SOJ, 36- pin mini BGA, and 44-pin TSOP (Type II) packages. And this device operates from a single 3.3V power supply and all inputs are TTL-compatible.
Features of the IS61LV5128-10T are:(1)High-speed access times: 10, 12 and 15 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Single 3.3V power supply; (9)Packages available: 36-pin 400-mil SOJ and 36-pin miniBGA and 44-pin TSOP (Type II).
The absolute maximum ratings of the IS61LV5128-10T can be summarized as:(1)Terminal Voltage with Respect to GND: 0.5 to Vcc+0.5 V;(2)Storage Temperature: -65 to +150 °C;(3)Power Dissipation: 1.0 W;(4)Temperature Under Bias: -55 to +125 °C. If you want to know more information such as the electrical characteristics about the IS61LV5128-10T, please download the datasheet in www.seekic.com or www.chinaicmart.com.