Features: • High-speed access times: 10, 12 and 15 ns• High-performance, low-power CMOS process• Multiple center power and ground pins for greater noise immunity• Easy memory expansion with CE and OE options• CE power-down• Fully static operation: no clock or re...
IS61LV5128: Features: • High-speed access times: 10, 12 and 15 ns• High-performance, low-power CMOS process• Multiple center power and ground pins for greater noise immunity• Easy memory...
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Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Features: • Internal self-timed write cycle• Individual Byte Write Control and Global ...
Symbol | Parameter | Value | Unit |
VTERM | Terminal Voltage with Respect toGND | 0.5 to Vcc+4.6 | V |
TSTG | Storage Temperature | 65 to +125 | °C |
PT | Power Dissipation | 65 to +150 | °C |
IOUT | DC Output Current (LOW) | 20 | mA |
The ISSI IS61LV5128 is a very high-speed, low power, 524,288-word by 8-bit CMOS static RAM. The IS61LV5128 is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 W (typical) with CMOS input levels. The IS61LV5128 operates from a single 3.3V power supply and all inputs are TTL-compatible.
The IS61LV5128 is available in 36-pin 400-mil SOJ, 36- pin mini BGA, and 44-pin TSOP (Type II) packages.