IS61LV6410

The ICSIIS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using JCSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable controls both writing and reading of the memory. A data byte allows Upper Byte and Lower Byte access. The IS61LV6416 is packaged in the JEDEC standard 44-pin 400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TFBGA.

The features of IS61LV6416 can be summarized as (1)high-speed access time: 8, 10, 12, and 15 ns; (2)CMOS low power operation: 250 mW (typical) operating, 250 W (typical) standby; (3)TTL compatible interface levels; (4)single 3.3V power supply; (5)fully static operation: no clock or refresh requued; (6)three state outputs; (7)data control for upper and lower bytes; (8)industrial temperature available.

The absolute maximum ratings of IS61LV6416 are (1)VTERM terminal voltage with respect to GND: -0.5 to Vcc+0.5V; (2)TSTG storage temperature: -65 to +150°C; (3)Pt power dissipation: 1.5W; (4)Iout DC output current (LOW): 20 mA.(Stress greater than those listed under absolute maximum ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.)