IS61LV6416-10TL

SRAM 1Mb 64Kx16 10ns Async SRAM 3.3v

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SeekIC No. : 00471115 Detail

IS61LV6416-10TL: SRAM 1Mb 64Kx16 10ns Async SRAM 3.3v

floor Price/Ceiling Price

US $ 1.07~1.52 / Piece | Get Latest Price
Part Number:
IS61LV6416-10TL
Mfg:
ISSI
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $1.52
  • $1.37
  • $1.22
  • $1.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Memory Size : 1 Mbit Organization : 64 K x 16
Access Time : 10 ns Supply Voltage - Max : 3.63 V
Supply Voltage - Min : 3.135 V Maximum Operating Current : 5 mA
Maximum Operating Temperature : + 70 C Minimum Operating Temperature : 0 C
Mounting Style : SMD/SMT Package / Case : TSOP-44    

Description

Packaging :
Organization : 64 K x 16
Mounting Style : SMD/SMT
Access Time : 10 ns
Package / Case : TSOP-44
Maximum Operating Temperature : + 70 C
Minimum Operating Temperature : 0 C
Memory Size : 1 Mbit
Supply Voltage - Min : 3.135 V
Supply Voltage - Max : 3.63 V
Maximum Operating Current : 5 mA


Description

The IS61LV6416-10TL is one member of the IS61LV6416 family which is designed as the 64K x 16 high-speed asynchronous CMOS static RAM device that is available in the JEDEC standard 44-pin 400 mil SOJ, 44-pin 400 mil TSOP-2 and 48-pin 6 x 8 mm TFBGA. Also this device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Features of the IS61LV6416-10TL are:(1)High-speed access times: 8, 10, 12 and 15 ns; (2)Data control for upper and lower bytes; (3)CMOS low power operation: 250 mW (typical) operating and 250 uW (typical) standby; (4)TTL compatible interface levels; (5)single 3.3V power supply; (6)fully static operation: no clock or refresh required; (7)industrial temperature available; (8)three state outputs.

The absolute maximum ratings of the IS61LV6416-10TL can be summarized as:(1)Terminal Voltage with Respect to GND: -0.5 to Vcc+0.5 V;(2)DC output current (low): 20 mA;(3)Storage Temperature: -65 to +150 °C;(4)Power Dissipation: 1.5 W. The electrical characteristics of this device can be summarized as:(1)Output HIGH Voltage: 2.4 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 2.0 to Vcc+0.3 V;(4)Input LOW Voltage: -0.3 to 0.8 V;(5)Input Leakage: -2 to +2 uA;(6)Output Leakage: -2 to +2 uA. If you want to know more information such as the electrical characteristics about the IS61LV6416-10TL, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationIS61LV6416-10TL
VendorISSI, Integrated Silicon Solution Inc
CategoryIntegrated Circuits (ICs)
Memory TypeSRAM - Asynchronous
Memory Size1M (64K x 16)
Speed10ns
InterfaceParallel
Package / Case44-TSOP II
PackagingTray
Voltage - Supply3.135 V ~ 3.6 V
Operating Temperature0°C ~ 70°C
Format - MemoryRAM
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IS61LV6416 10TL
IS61LV641610TL
706 1039 ND
7061039ND
706-1039



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