IS61LV6432-6TQ

The IS61LV6432-6TQ is one member of the IS61LV6432 family which is designed as the high-speed, low-power synchronous static RAM that is organized as 65,536 words by 32 bits, fabricated with ICSI's advanced CMOS technology. Also this device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit.

Features of the IS61LV6432-6TQ are:(1)Internal self-timed write cycle; (2)Individual Byte Write Control and Global Write; (3)Clock controlled, registered address, data and control; (4)Pentium or linear burst sequence control using MODE input; (5)Three chip enables for simple depth expansion and address pipelining; (6)Common data inputs and data outputs; (7)Power-down control by ZZ input; (8)JEDEC 100-Pin LQFP and PQFP package; (9)3.3V VCC and 2.5V VCCQ for 2.5 I/O's; (10)Two Clock enables and one Clock disable to eliminate multiple bank bus contention.; (11)Control pins mode upon power-up: MODE in interleave burst mode and ZZ in normal operation mode; (12)Industrial temperature available.

The absolute maximum ratings of the IS61LV6432-6TQ can be summarized as:(1)Temperature Under Bias:10 to +85 °C;(2)Storage Temperature:55 to +150 °C;(3)Power Dissipation: 1.8 W;(4)Output Current (per I/O): 100 mA;(5)Voltage Relative to GND for I/O Pins:0.5 to VCCQ + 0.3 V;(6)Voltage Relative to GND for Address and Control Inputs:0.5 to 4.6 V.

The electrical characteristics of this IS61LV6432-6TQ can be summarized as:(1)Output HIGH Voltage: 2.0 V;(2)Output LOW Voltage: 0.4 V;(3)Input HIGH Voltage: 1.7 to VCCQ + 0.3 V;(4)Input LOW Voltage:0.3 to 0.7 V. If you want to know more information about IS61LV6432-6TQ, please download the datasheet in www.seekic.com or www.chinaicmart.com .