IS61NLF51218

The IS61NLF51218 The 8 Meg 'NF' product family feature high-speed,low-power synchronous static RAMs designed to provide a burstable, high-performance, 'no wait' state, device for
network and communications customers. They are organized as 262,144 words by 32 bits, 262,144 words by 36 bits and 524,288 words by 18 bits, fabricated with ISSI's advanced CMOS technology.

Features of the IS61NLF51218 are:(1)100 percent bus utilization; (2)? No wait cycles between Read and Write; (3)Internal self-timed write cycle; (4)Individual Byte Write Control; (5)Single R/W (Read/Write) control pin; (6)Clock controlled, registered address, data and control; (7)Interleaved or linear burst sequence control using MODE input; (8)Three chip enables for simple depth expansion and address pipelining for TQFP; (9)Power Down mode; (10)Common data inputs and data outputs; (11)CKE pin to enable clock and suspend operation; (12)JEDEC 100-pin TQFP, 119 PBGA package; (13)Single +3.3V power supply (± 5%); (14)NF Version: 3.3V I/O Supply Voltage; (15)NLF Version: 2.5V I/O Supply Voltage; (16)Industrial temperature available.

The absolute maximum ratings of the IS61NLF51218 can be summarized as:(1)TBIAS Temperature Under Bias :10 to +85 °C; (2)TSTG Storage Temperature :65 to +150 °C; (3)PD Power Dissipation: 1.6 W; (4)IOUT Output Current (per I/O): 100 mA; (5)VIN, VOUT Voltage Relative to GND for I/O Pins: 0.5 to VCCQ + 0.3 V; (6)VIN Voltage Relative to GND for for Address and Control Inputs: 0.3 to 4.6 V.

If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .