IS61SP25618

Features: • Internal self-timed write cycle• Individual Byte Write Control and Global Write• Clock controlled, registered address, data and control• Pentium™ or linear burst sequence control using MODE input• Three chip enables for simple depth expansion and add...

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SeekIC No. : 004379227 Detail

IS61SP25618: Features: • Internal self-timed write cycle• Individual Byte Write Control and Global Write• Clock controlled, registered address, data and control• Pentium™ or linear ...

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Part Number:
IS61SP25618
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/3

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Product Details

Description



Features:

• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and control
• Pentium™ or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP and 119-pin PBGA package
• Single +3.3V, +10%, -5% power supply
• Power-down snooze mode



Specifications

Symbol Parameter Value Unit
TBIAS Temperature Under Bias 40 to +85 °C
TSTG Storage Temperature 55 to +150 °C
PD Power Dissipation 1.6 W
IOUT Output Current (per I/O) 100 mA
VIN,VOUT Voltage Relative to GND for I/O Pins 0.5 to VCCQ + 0.3 V
VIN Voltage Relative to GND for for Address and Control Inputs 0.5 to VCC + 0.5 V
VCC Voltage on Vcc Supply Relatiive to GND 0.5 to 4.6 V



Description

The ISSI IS61SP25616 and IS61SP25618 is a high-speed synchronous static RAM designed to provide a burstable, high-performance memory for high speed networking and communication applications. IS61SP25618 is organized as 262,144 words by 16 bits and 18 bits, fabricated with ISSI's advanced CMOS technology. The IS61SP25618 integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

Write cycles IS61SP25618 are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be from one to four bytes wide as controlled by the write control inputs.

Separate byte enables allow individual bytes to be written. BW1 controls DQ1-8, BW2 controls DQ9-16, conditioned by BWE being LOW. A LOW on GW input would cause all bytes to be written.

Bursts can be initiated with either ADSP (Address Status Processor) or ADSC (Address Status Cache Controller) input pins. Subsequent burst addresses can be generated internally and controlled by the ADV (burst address advance) input pin.

The mode pin IS61SP25618 is used to select the burst sequence order, Linear burst is achieved when this pin is tied LOW. Interleave burst is achieved when this pin is tied HIGH or left floating.




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